Invention Grant
- Patent Title: Memory device and memory system including the same
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Application No.: US17411421Application Date: 2021-08-25
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Publication No.: US11562780B2Publication Date: 2023-01-24
- Inventor: Byunghoon Jeong , Kyungtae Kang , Jangwoo Lee , Jeongdon Ihm
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0123349 20191004
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; H03K19/173 ; G11C8/18 ; G11C29/42

Abstract:
A memory device includes a memory cell array configured to store data; and a data output circuit configured to transmit status data to an external device through at least one data line in a latency period in response to a read enable signal received from the external device and transmit the data read from the memory cell array to the external device through the at least one data line in a period subsequent to the latency period.
Public/Granted literature
- US20210383848A1 MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME Public/Granted day:2021-12-09
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