Invention Grant
- Patent Title: Frequency-voltage conversion circuit, semiconductor device, and memory system
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Application No.: US17459499Application Date: 2021-08-27
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Publication No.: US11562796B2Publication Date: 2023-01-24
- Inventor: Hiroo Yabe
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2021-041398 20210315
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/30 ; H03K9/06 ; H03D3/04

Abstract:
A frequency-voltage conversion circuit includes a constant current source, a first switch connected to an output of the constant current source, a first capacitor connected between the first switch and ground, a second switch connected between a first node that is between the first switch and the first capacitor, and an output node, a third switch connected between the first node and the ground, a fourth switch connected to the output of the constant current source, a second capacitor connected between the fourth switch and the ground, a fifth switch connected between a second node that is between the fourth switch and the second capacitor, and the output node, and a sixth switch connected between the second node and the ground.
Public/Granted literature
- US20220293196A1 FREQUENCY-VOLTAGE CONVERSION CIRCUIT, SEMICONDUCTOR DEVICE, AND MEMORY SYSTEM Public/Granted day:2022-09-15
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