Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US15895358Application Date: 2018-02-13
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Publication No.: US11562935B2Publication Date: 2023-01-24
- Inventor: Hsien-Wei Chen , Ching-Jung Yang , Ming-Fa Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L23/13
- IPC: H01L23/13 ; H01L23/29 ; H01L23/00 ; H01L23/31 ; H01L23/538 ; H01L25/065 ; H01L23/14 ; H01L23/15 ; H01L23/36

Abstract:
The present disclosure provides a semiconductor structure including a substrate, a first die vertically over the substrate, a second die vertically over the substrate and laterally separated from the first die with a gap, and an insulation material in the gap. The substrate is at least partially overlapped with the gap when viewed from a top view perspective, and a Young's modulus of the substrate is higher than that of the insulation material.
Public/Granted literature
- US20190139842A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2019-05-09
Information query
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