Invention Grant
- Patent Title: High density multiple die structure
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Application No.: US16088340Application Date: 2016-04-27
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Publication No.: US11562955B2Publication Date: 2023-01-24
- Inventor: Cory A. Runyan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2016/029563 WO 20160427
- International Announcement: WO2017/188944 WO 20171102
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/522 ; H01L23/49

Abstract:
Apparatus and methods are provided for integrated circuit packages having a low z-height. In an example, a method can include mounting a first integrated circuit sub-package to a first package substrate wherein the sub-package substrate spans an opening of the first package substrate, mounting a second integrated circuit package to a second package substrate, and mounting the first package substrate with the second package substrate wherein the mounting includes locating a portion of the second integrated circuit package within the opening of the first package substrate.
Public/Granted literature
- US20200303297A1 HIGH DENSITY MULTIPLE DIE STRUCTURE Public/Granted day:2020-09-24
Information query
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