Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17190006Application Date: 2021-03-02
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Publication No.: US11562976B2Publication Date: 2023-01-24
- Inventor: Takahiro Tomimatsu , Shinya Arai
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2020-156645 20200917
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L23/00 ; H01L25/065 ; H01L25/18 ; H01L25/00
Abstract:
According to one embodiment, a semiconductor device includes a first substrate; a first insulating film provided on the first substrate; a first plug provided in the first insulating film; a second substrate provided on the first insulating film; and a first wiring including a first portion and a second portion. The first portion is provided in the second substrate and coupled to the first plug, and the second portion is provided on the second substrate and coupled to a bonding pad.
Public/Granted literature
- US20220084970A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-03-17
Information query
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