Invention Grant
- Patent Title: Imaging device and solid-state image sensor
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Application No.: US17252774Application Date: 2019-06-07
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Publication No.: US11563058B2Publication Date: 2023-01-24
- Inventor: Yukio Kaneda , Fumihiko Koga
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JPJP2018-126650 20180703
- International Application: PCT/JP2019/022702 WO 20190607
- International Announcement: WO2020/008801 WO 20200109
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H01L27/30 ; H04N9/04 ; H04N5/369 ; H01L51/44 ; H01L27/146 ; H01L27/28

Abstract:
An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
Public/Granted literature
- US11532672B2 Imaging device and solid-state image sensor Public/Granted day:2022-12-20
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