Invention Grant
- Patent Title: Metal insulator metal (MIM) structure and manufacturing method thereof
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Application No.: US16737569Application Date: 2020-01-08
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Publication No.: US11563079B2Publication Date: 2023-01-24
- Inventor: Sai-Hooi Yeong , Chih-Yu Chang , Chun-Yen Peng , Chi On Chui
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01G4/20
- IPC: H01G4/20 ; H01L49/02 ; H01G13/00 ; H01G4/08

Abstract:
A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.
Public/Granted literature
- US20210210594A1 METAL INSULATOR METAL (MIM) STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-07-08
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