Invention Grant
- Patent Title: Structure and method for SRAM FinFET device
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Application No.: US16659391Application Date: 2019-10-21
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Publication No.: US11563118B2Publication Date: 2023-01-24
- Inventor: Kuo-Cheng Ching , Ka-Hing Fung , Zhiqiang Wu , Carlos H. Diaz
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/267 ; H01L29/49 ; H01L29/51 ; H01L21/02 ; H01L21/324 ; H01L27/11 ; H01L21/8238 ; H01L29/06 ; H01L29/66
Abstract:
The present disclosure provides an embodiment of a fin-like field-effect transistor (FinFET) device. The device includes a first fin structure disposed over an n-type FinFET (NFET) region of a substrate. The first fin structure includes a silicon (Si) layer, a silicon germanium oxide (SiGeO) layer disposed over the silicon layer and a germanium (Ge) feature disposed over the SiGeO layer. The device also includes a second fin structure over the substrate in a p-type FinFET (PFET) region. The second fin structure includes the silicon (Si) layer, a recessed silicon germanium oxide (SiGeO) layer disposed over the silicon layer, an epitaxial silicon germanium (SiGe) layer disposed over the recessed SiGeO layer and the germanium (Ge) feature disposed over the epitaxial SiGe layer.
Public/Granted literature
- US20200052119A1 Structure and Method for SRAM FinFET Device Public/Granted day:2020-02-13
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