Invention Grant
- Patent Title: Variable resistance memory device and manufacturing method of the same
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Application No.: US17211764Application Date: 2021-03-24
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Publication No.: US11563172B2Publication Date: 2023-01-24
- Inventor: Jae Hyun Han
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2020-0124963 20200925
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
There are provided a variable resistance memory device and a manufacturing method of the same. The variable resistance memory device includes: a first electrode; a second electrode arranged in a vertical direction from the first electrode; and an oxide layer having an oxygen deficient region extending in the vertical direction between the second electrode and the first electrode.
Public/Granted literature
- US20220102628A1 VARIABLE RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2022-03-31
Information query
IPC分类:
