Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US17329317Application Date: 2021-05-25
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Publication No.: US11568935B2Publication Date: 2023-01-31
- Inventor: Kazuhiko Satou , Ryo Fukuda , Masaru Koyanagi , Kensuke Yamamoto , Masato Dome , Kei Shiraishi , Junya Matsuno , Kenro Kubota
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-139304 20200820
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/04 ; G11C16/26 ; H03K19/00 ; H03K19/20

Abstract:
A semiconductor storage device including an output pad, a first circuit connected to the output pad, a second circuit connected to the first circuit, a third circuit configured to output a first setting signal for controlling the first circuit accordance with a characteristic variation of the first circuit, and a fourth circuit configured to generate a second setting signal for controlling the second circuit in accordance with the first setting signal received from the third circuit and output the second setting signal to the second circuit.
Public/Granted literature
- US20220059165A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2022-02-24
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