The abstract of the disclosure was objected to because of informality (e.g. format, reference to figures, etc.). See MPEP § 608.01 (b). Please amend the abstract to recite: Non-volatile memory device may include at least an array of memory cells. The non-volatile memory cells may include associated decoding and sensing circuitry and a memory controller. Methods for checking the erasing phase of a non-volatile device may include performing a dynamic erase operation of at least a memory block and storing in a dummy row at least an internal block variable of the dynamic erase operation and/or a known pattern.