Invention Grant
- Patent Title: Method for manufacturing semiconductor structure with reduced nodule defects
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Application No.: US17199033Application Date: 2021-03-11
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Publication No.: US11569084B2Publication Date: 2023-01-31
- Inventor: Che-Yu Lin , Chih-Chiang Chang , Chien-Hung Chen , Ming-Hua Yu , Tsung-Hsi Yang , Ting-Yi Huang , Chii-Horng Li , Yee-Chia Yeo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/092 ; H01L29/08 ; H01L29/45 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L21/285
Abstract:
A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.
Public/Granted literature
- US20220293415A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE WITH REDUCED NODULE DEFECTS Public/Granted day:2022-09-15
Information query
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