Invention Grant
- Patent Title: Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
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Application No.: US17194641Application Date: 2021-03-08
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Publication No.: US11569123B2Publication Date: 2023-01-31
- Inventor: Yoshihisa Kagawa , Kenichi Aoyagi , Yoshiya Hagimoto , Nobutoshi Fujii
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2011-148883 20110705,JP2011-168021 20110801,JP2011-170666 20110804,JP2011-210142 20110927,JP2012-006356 20120116
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L21/768 ; H01L23/528 ; H01L27/146 ; H01L23/00 ; H04N5/369 ; H01L23/532 ; H01L23/48 ; H01L27/06
Abstract:
Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
Public/Granted literature
- US20210265200A1 SEMICONDUCTOR DEVICE, FABRICATION METHOD FOR A SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2021-08-26
Information query
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