Invention Grant
- Patent Title: Patterning of dual metallization layers
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Application No.: US16001482Application Date: 2018-06-06
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Publication No.: US11569160B2Publication Date: 2023-01-31
- Inventor: Jeremy Ecton
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP PC
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48

Abstract:
Embodiments may relate to a semiconductor package that includes a routing trace coupled with a substrate. The routing trace may be linear on a side of the routing trace between the substrate and a top of the routing trace. The semiconductor package may further include a power trace coupled with the substrate. The power trace may be concave on a side of the power trace between the substrate and a top of the power trace. Other embodiments may be described and/or claimed.
Information query
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