Invention Grant
- Patent Title: Semiconductor device structure with conductive polymer liner and method for forming the same
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Application No.: US17004889Application Date: 2020-08-27
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Publication No.: US11569189B2Publication Date: 2023-01-31
- Inventor: Yu-Han Hsueh
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
The present disclosure relates to a semiconductor device structure with a conductive polymer liner and a method for preparing the semiconductor device structure. The semiconductor device structure includes a first metal layer disposed over a semiconductor substrate, and a second metal layer disposed over the first metal layer. The semiconductor device structure also includes a conductive structure disposed between the first metal layer and the second metal layer. The conductive structure includes a first conductive via and a first conductive polymer liner surrounding the first conductive via.
Public/Granted literature
- US20220068855A1 SEMICONDUCTOR DEVICE STRUCTURE WITH CONDUCTIVE POLYMER LINER AND METHOD FOR FORMING THE SAME Public/Granted day:2022-03-03
Information query
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