Invention Grant
- Patent Title: Semiconductor die with improved thermal insulation between a power portion and a peripheral portion, method of manufacturing, and package housing the die
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Application No.: US17354448Application Date: 2021-06-22
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Publication No.: US11569211B2Publication Date: 2023-01-31
- Inventor: Davide Giuseppe Patti , Mario Antonio Aleo
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed Intellectual Property Law Group LLP
- Priority: IT102019000001201 20190128
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/16 ; H01L21/762 ; H01L21/763 ; H01L25/00
Abstract:
A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.
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Information query
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