Invention Grant
- Patent Title: Low-voltage electrostatic discharge (ESD) protection circuit, integrated circuit and method for ESD protection thereof
-
Application No.: US16888545Application Date: 2020-05-29
-
Publication No.: US11569222B2Publication Date: 2023-01-31
- Inventor: Kei Kang Hung , Qi-An Xu
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Anhui
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN201711282468.4 20171207
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04

Abstract:
An electrostatic discharge protection circuit for an integrated circuit and a method for electrostatic discharge protection thereof are disclosed. The integrated circuit includes a power source, a ground, a signal input, and a signal output. The integrated circuit further comprises one or more essentially identically configured electrostatic discharge protection circuits, configured to provide electrostatic discharge protection between any two of the power source, the ground, the signal input, and the signal output. A method of providing electrostatic discharge protection includes providing one or more essentially identically configured electrostatic discharge protection circuits coupled between and providing electrostatic discharge protection for any two of the power source, the ground, the signal input, and the signal output. The disclosed integrated circuit and method provide advantages of simplifying the integrated circuit design and reducing design time.
Public/Granted literature
Information query
IPC分类: