Invention Grant
- Patent Title: Graphene LHFETS (lateral heterostructure field effect transistors) on SI compatible with CMOS BEOL process
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Application No.: US17242276Application Date: 2021-04-27
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Publication No.: US11569367B1Publication Date: 2023-01-31
- Inventor: Kyung-Ah Son , Jeong-Sun Moon , Hwa Chang Seo
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L29/16 ; H01L29/167 ; H01L29/786 ; H01L27/12 ; H01L21/223 ; H01L29/40 ; H01L21/02 ; H01L29/49
Abstract:
A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.
Information query
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