Invention Grant
- Patent Title: Semiconductor structure
-
Application No.: US17366053Application Date: 2021-07-02
-
Publication No.: US11569380B2Publication Date: 2023-01-31
- Inventor: Wei-Hsuan Chang , Ming-Hua Tsai , Chin-Chia Kuo
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/45
Abstract:
A semiconductor structure is provided, and the semiconductor structure includes a substrate, and an active area is defined thereon, a gate structure spanning the active area, wherein the overlapping range of the gate structure and the active area is defined as an overlapping region, and the overlapping region includes four corners, and at least one salicide block covering the four corners of the overlapping region.
Public/Granted literature
- US20230006062A1 Semiconductor structure Public/Granted day:2023-01-05
Information query
IPC分类:
