- Patent Title: Method for forming semiconductor device structure with cap layer
-
Application No.: US17135316Application Date: 2020-12-28
-
Publication No.: US11569386B2Publication Date: 2023-01-31
- Inventor: Feng-Ching Chu , Wei-Yang Lee , Feng-Cheng Yang , Yen-Ming Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/161 ; H01L29/165 ; H01L29/24 ; H01L29/267 ; H01L29/167 ; H01L23/535 ; H01L21/8238 ; H01L29/66 ; H01L27/088 ; H01L29/417
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and a second fin structure extended above a substrate, and a first source/drain structure formed over the first fin structure. The first source/drain structure is made of an N-type conductivity material. The semiconductor device structure also includes a second source/drain structure formed over the second fin structure, and the second source/drain structure is made of an P-type conductivity material. The semiconductor device structure also includes a cap layer formed over the first source/drain structure, wherein the cap layer is made of P-type conductivity material.
Public/Granted literature
- US20210119049A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER Public/Granted day:2021-04-22
Information query
IPC分类:
