Invention Grant
- Patent Title: Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer
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Application No.: US17057207Application Date: 2019-05-20
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Publication No.: US11572533B2Publication Date: 2023-02-07
- Inventor: Takafumi Shimoda , Yuki Kikkawa , Takayuki Negishi , Seiji Tono
- Applicant: Tokuyama Corporation
- Applicant Address: JP Yamaguchi
- Assignee: Tokuyama Corporation
- Current Assignee: Tokuyama Corporation
- Current Assignee Address: JP Yamaguchi
- Agency: Cahn & Samuels, LLP
- Priority: JPJP2018-099223 20180523,JPJP2018-099224 20180523,JPJP2018-116832 20180620
- International Application: PCT/JP2019/019898 WO 20190520
- International Announcement: WO2019/225541 WO 20191128
- Main IPC: C07C209/66
- IPC: C07C209/66 ; C11D7/32 ; C07C209/68 ; C07C211/63 ; C11D11/00 ; H01L21/02
Abstract:
A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.
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