Invention Grant
- Patent Title: Open Czochralski furnace for single crystal growth
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Application No.: US17451844Application Date: 2021-10-22
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Publication No.: US11572634B2Publication Date: 2023-02-07
- Inventor: Yu Wang , Weiming Guan , Zhenxing Liang
- Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Applicant Address: CN Sichuan
- Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee Address: CN Sichuan
- Agency: Metis IP LLC
- Main IPC: C30B15/14
- IPC: C30B15/14 ; C30B15/30

Abstract:
The present disclosure provides a crystal growth apparatus. The crystal growth apparatus may include a furnace chamber; a temperature field device placed at least partially into the furnace chamber, wherein a cover plate of the temperature field device includes a first through hole; and a pulling rod component that passes through the first through hole and extends into the temperature field device.
Information query
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