Invention Grant
- Patent Title: Semiconductor device and test method of semiconductor device
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Application No.: US16687308Application Date: 2019-11-18
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Publication No.: US11573134B2Publication Date: 2023-02-07
- Inventor: Tadashi Kameyama , Masanori Ikeda
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-244354 20181227
- Main IPC: G01K7/01
- IPC: G01K7/01 ; G01K15/00 ; G06F1/20

Abstract:
A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.
Public/Granted literature
- US20200209075A1 SEMICONDUCTOR DEVICE AND TEST METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2020-07-02
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