Invention Grant
- Patent Title: Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field
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Application No.: US17236068Application Date: 2021-04-21
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Publication No.: US11573143B2Publication Date: 2023-02-07
- Inventor: Jen-Huang Albert Chiou , Shiuh-Hui Steven Chen
- Applicant: Vitesco Technologies USA, LLC
- Applicant Address: US MI Auburn Hills
- Assignee: Vitesco Technologies USA, LLC
- Current Assignee: Vitesco Technologies USA, LLC
- Current Assignee Address: US MI Auburn Hills
- Main IPC: G01L9/00
- IPC: G01L9/00 ; B81B7/02 ; G01L19/14

Abstract:
A pressure sensing element, including a substrate, a device layer coupled to the substrate, a diaphragm being part of the device layer, and a plurality of piezoresistors coupled to the diaphragm. A plurality of bond pads is disposed on the device layer, and an electrical field shield is bonded to the top of device layer and at least one of the bond pads. At least one stress adjustor is part of the electrical field shield, where the stress adjustor is a cut-out constructed and arranged to reduce thermal hysteresis of the pressure sensing element caused by stress relaxation of the electrical field shield during a cooling and heating cycle. The stress adjustor may be a thin film deposited on top of the electrical field shield, which may apply residual stress to the piezoresistors. The pressure sensing element may include a cavity integrally formed as part of the substrate.
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