Invention Grant
- Patent Title: Method of testing a semiconductor element with improved pressing force direction
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Application No.: US17033290Application Date: 2020-09-25
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Publication No.: US11573169B2Publication Date: 2023-02-07
- Inventor: Atsushi Maruno , Wataru Okamoto
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPJP2019-176959 20190927,JPJP2020-103049 20200615
- Main IPC: G01N3/00
- IPC: G01N3/00 ; G01N19/04 ; G01N3/08
Abstract:
A method of conducting a shear strength test on a semiconductor element with improved pressing force direction includes pressing a peripheral surface of the semiconductor element with a shear tool in a direction inclined to gradually head away from the surface of the substrate along the direction of pressing to conduct a shear strength test with a die shear strength tester.
Public/Granted literature
- US20210096058A1 METHOD OF TESTING SEMICONDUCTOR ELEMENT Public/Granted day:2021-04-01
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