A data storage device including a first non-volatile memory configured to store data, and a device controller configured to control the first non-volatile memory may be provided, and wherein the device controller may be configured to receive a data read command including a first logical address of the first non-volatile memory, a first physical address corresponding to the first logical address, and first status information of the first non-volatile memory corresponding to the first physical address, determine a first read level, using the first status information included in the data read command, and apply a voltage of the first read level to a first word line of the first non-volatile memory corresponding to the first physical address to read data.