Invention Grant
- Patent Title: Integrated sensor device with deep learning accelerator and random access memory
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Application No.: US16906213Application Date: 2020-06-19
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Publication No.: US11574100B2Publication Date: 2023-02-07
- Inventor: Poorna Kale
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G06F15/16
- IPC: G06F15/16 ; G06F30/331 ; G06F13/16 ; G06F13/42 ; G06F9/30 ; G06F3/06 ; G06N3/08

Abstract:
Systems, devices, and methods related to a Deep Learning Accelerator and memory are described. For example, an integrated sensor device may be configured to execute instructions with matrix operands and configured with: a sensor to generate measurements of stimuli; random access memory to store instructions executable by the Deep Learning Accelerator and store matrices of an Artificial Neural Network; a host interface connectable to a host system; and a controller to store the measurements generated by the sensor into the random access memory as an input to the Artificial Neural Network. After the Deep Learning Accelerator generates in the random access memory an output of the Artificial Neural Network by executing the instructions to process the input, the controller may communicate the output to a host system through the host interface.
Public/Granted literature
- US20210397771A1 Integrated Sensor Device with Deep Learning Accelerator and Random Access Memory Public/Granted day:2021-12-23
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