A method of manufacturing a semiconductor device includes forming a transistor layer with an M*1st layer that overlays the transistor layer with one or more first conductors that extend in a first direction. Forming an M*2nd layer that overlays the M*1st layer with one or more second conductors which extend in a second direction. Forming a first pin in the M*2nd layer representing an output pin of a cell region. Forming a long axis of the first pin substantially along a selected one of the one or more second conductors. Forming a majority of the total number of pins in the M*1st layer, the forming including: forming second, third, fourth and fifth pins in the M*1st layer representing corresponding input pins of the circuit; and forming long axes of the second to fifth pins substantially along corresponding ones of the one or more first conductors.