Invention Grant
- Patent Title: Method of forming an integrated circuit
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Application No.: US16206960Application Date: 2018-11-30
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Publication No.: US11574110B2Publication Date: 2023-02-07
- Inventor: Jung-Chan Yang , Ting-Wei Chiang , Jerry Chang-Jui Kao , Hui-Zhong Zhuang , Lee-Chung Lu , Li-Chun Tien , Meng-Hung Shen , Shang-Chih Hsieh , Chi-Yu Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/394
- IPC: G06F30/394 ; H01L27/118 ; H01L23/522 ; H01L23/528 ; H01L27/02

Abstract:
A method of fabricating an integrated circuit structure includes placing a first set of conductive structure layout patterns on a first layout level, placing a second set of conductive structure layout patterns on a second layout level, placing a first set of via layout patterns between the second set of conductive structure layout patterns and the first set of conductive structure layout patterns, and manufacturing the integrated circuit structure based on at least one of the layout patterns of the integrated circuit. At least one of the layout patterns is stored on a non-transitory computer-readable medium, and at least one of the placing operations is performed by a hardware processor. The first set of conductive structure layout patterns extends in a first direction. The second set of conductive structure layout patterns extends in the second direction, and overlap the first set of conductive structure layout patterns.
Public/Granted literature
- US20190102503A1 INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT Public/Granted day:2019-04-04
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