Invention Grant
- Patent Title: Dynamic random access memory and programming method therefor
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Application No.: US17240008Application Date: 2021-04-26
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Publication No.: US11574684B2Publication Date: 2023-02-07
- Inventor: Chao Yang Chen , Ming Sheng Tung
- Applicant: NS POLES TECHNOLOGY CORP.
- Applicant Address: CN Zhuhai
- Assignee: NS POLES TECHNOLOGY CORP.
- Current Assignee: NS POLES TECHNOLOGY CORP.
- Current Assignee Address: CN Zhuhai
- Agency: Rosenberg, Klein & Lee
- Priority: TW110100195 20210105
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/24 ; G11C16/26 ; G11C16/30 ; G11C5/06

Abstract:
The present invention relates to a dynamic random access memory and a programming method therefor with two stages. In a first stage, a capacitor of a memory cell of the dynamic random access memory is broken down, so that the dynamic random access memory becomes a one-time programmable memory. In a second stage, a resistance of the capacitor that is broken down is reduced, so that state data of the memory cell can be more easily interpreted.
Public/Granted literature
- US20220215884A1 DYNAMIC RANDOM ACCESS MEMORY AND PROGRAMMING METHOD THEREFOR Public/Granted day:2022-07-07
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