Invention Grant
- Patent Title: Plasma processing apparatus and control method
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Application No.: US16872432Application Date: 2020-05-12
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Publication No.: US11574798B2Publication Date: 2023-02-07
- Inventor: Chishio Koshimizu , Shin Hirotsu
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2018-191735 20181010,JPJP2019-156107 20190828
- Main IPC: H01J37/16
- IPC: H01J37/16 ; H01J37/32 ; H01J37/04 ; H01J37/24

Abstract:
A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.
Public/Granted literature
- US20200273670A1 PLASMA PROCESSING APPARATUS AND CONTROL METHOD Public/Granted day:2020-08-27
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