A method of manufacturing a support pedestal for use in semiconductor processing includes applying a protective layer on a conductive member of the support pedestal with an atomic layer deposition (ALD) process. The support pedestal has a support plate bonded to a tubular shaft. The support plate has a substrate, an electric element embedded in the substrate, and a conductive member connected to the electric element, and the tubular shaft defines an internal chamber. The ALD process introducing first precursors into the chamber of the tubular shaft to form a first monolayer on the conductive member, and introducing second precursors into the chamber of the tubular shaft to form a second monolayer on the first monolayer.