Invention Grant
- Patent Title: Semiconductor device with intervening layer and method for fabricating the same
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Application No.: US17004902Application Date: 2020-08-27
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Publication No.: US11574841B2Publication Date: 2023-02-07
- Inventor: Ping Hsu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L23/532 ; H01L21/3213 ; H01L23/528
Abstract:
The present application relates to a semiconductor device with an intervening layer and a method for fabricating the semiconductor device with the intervening layer. The semiconductor device includes a substrate, a bottom conductive plug positioned on the substrate, an intervening conductive layer positioned on the bottom conductive plug, and a top conductive plug positioned on the intervening conductive layer. A top surface of the intervening conductive layer is non-planar.
Public/Granted literature
- US20220068710A1 SEMICONDUCTOR DEVICE WITH INTERVENING LAYER AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-03-03
Information query
IPC分类:
