Invention Grant
- Patent Title: Local interconnect layer with device within second dielectric material, and related methods
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Application No.: US17169947Application Date: 2021-02-08
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Publication No.: US11574863B2Publication Date: 2023-02-07
- Inventor: Anthony K. Stamper , Steven M. Shank , Venkata N. R. Vanukuru
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/528

Abstract:
Embodiments of the disclosure provide an integrated circuit (IC) structure, including a device layer including a device on a substrate. A local interconnect layer is over the device layer, and includes a first dielectric material over the substrate. The first dielectric material has a first effective dielectric constant. A second dielectric material is over the device and adjacent the first dielectric material. The second dielectric material has a second effective dielectric constant less than the first effective dielectric constant.
Public/Granted literature
- US20220254715A1 LOCAL INTERCONNECT LAYER WITH DEVICE WITHIN SECOND DIELECTRIC MATERIAL, AND RELATED METHODS Public/Granted day:2022-08-11
Information query
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