Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US17217919Application Date: 2021-03-30
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Publication No.: US11574878B2Publication Date: 2023-02-07
- Inventor: Tzuan-Horng Liu , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT Law
- Agent Anthony King
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/48 ; H01L23/498 ; H01L23/31 ; H01L23/00 ; H01L21/56 ; H01L23/538 ; H01L25/065

Abstract:
A semiconductor structure includes a first substrate; a second substrate, disposed over the first substrate; a die, disposed over the second substrate; a via, extending through the second substrate and electrically connecting to the die; a redistribution layer (RDL) disposed between the first substrate and the second substrate, including a dielectric layer, a first conductive structure electrically connecting to the via, and a second conductive structure laterally surrounding the first conductive structure; and an underfill material, partially surrounding the RDL, wherein one end of the second conductive structure exposed through the dielectric layer is entirely in contact with the underfill material.
Public/Granted literature
- US20210217710A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-07-15
Information query
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