Invention Grant
- Patent Title: Semiconductor device with heat dissipation unit and method for fabricating the same
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Application No.: US17158337Application Date: 2021-01-26
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Publication No.: US11574891B2Publication Date: 2023-02-07
- Inventor: Shing-Yih Shih
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/18 ; H01L23/498 ; H01L25/00 ; H01L21/48
Abstract:
The present application discloses a semiconductor device with a heat dissipation unit and a method for fabricating the semiconductor device. The semiconductor device includes a die stack, an intervening bonding layer positioned on the die stack, and a carrier structure including a carrier substrate positioned on the intervening bonding layer, and through semiconductor vias positioned in the carrier substrate and on the intervening bonding layer for thermally conducting heat.
Public/Granted literature
- US20220238487A1 SEMICONDUCTOR DEVICE WITH HEAT DISSIPATION UNIT AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-07-28
Information query
IPC分类:
