Invention Grant
- Patent Title: Integrated circuit device and method
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Application No.: US16910658Application Date: 2020-06-24
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Publication No.: US11574900B2Publication Date: 2023-02-07
- Inventor: Chih-Liang Chen , Shun Li Chen , Li-Chun Tien , Ting Yu Chen , Hui-Zhong Zhuang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/392 ; H01L27/092

Abstract:
A method includes generating a layout diagram of a cell of an integrated circuit (IC), and storing the generated layout diagram on a non-transitory computer-readable medium. In the generating the layout diagram of the cell, a first active region is arranged inside a boundary of the cell. The first active region extends along a first direction. At least one gate region is arranged inside the boundary. The at least one gate region extends across the first active region along a second direction transverse to the first direction. A first conductive region is arranged to overlap the first active region and a first edge of the boundary. The first conductive region is configured to form an electrical connection to the first active region.
Public/Granted literature
- US20210407985A1 INTEGRATED CIRCUIT DEVICE AND METHOD Public/Granted day:2021-12-30
Information query
IPC分类: