Invention Grant
- Patent Title: Positive strike SCR, negative strike SCR, and a bidirectional ESD structure that utilizes the positive strike SCR and the negative strike SCR
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Application No.: US15665575Application Date: 2017-08-01
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Publication No.: US11574903B2Publication Date: 2023-02-07
- Inventor: Henry Litzmann Edwards , Akram A. Salman , Md Iqbal Mahmud
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/747 ; H01L29/66 ; H01L29/45 ; H01L29/74 ; H01L29/06
Abstract:
A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.
Public/Granted literature
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