Invention Grant
- Patent Title: Semiconductor device, method for manufacturing the same, and integrated circuit
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Application No.: US17332536Application Date: 2021-05-27
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Publication No.: US11574909B2Publication Date: 2023-02-07
- Inventor: Ming-Yen Chuang , Katherine H. Chiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor device includes a transistor, a bit line and a bit-line via structure. The transistor is located in a transistor layer, and has a source contact and a drain contact. The bit line is electrically connected to one of the source contact and the drain contact. The bit-line via structure is located in the transistor layer, and electrically interconnects the bit line and a periphery device.
Public/Granted literature
- US20220384447A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND INTEGRATED CIRCUIT Public/Granted day:2022-12-01
Information query
IPC分类:
