Invention Grant
- Patent Title: Semiconductor devices and method for manufacturing the same
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Application No.: US17233162Application Date: 2021-04-16
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Publication No.: US11574927B2Publication Date: 2023-02-07
- Inventor: Marcus Johannes Henricus Van Dal , Georgios Vellianitis , Gerben Doornbos
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L27/1159 ; H01L21/28 ; H01L29/24 ; H01L29/51 ; H01L29/16
Abstract:
A semiconductor device includes a gate electrode, a channel layer, and a ferroelectric layer. The ferroelectric layer includes a monocrystalline region located between the gate electrode and the channel layer to serve as a gate dielectric, and a polycrystalline region located at an edge of the gate electrode. A method for manufacturing the semiconductor device is also disclosed.
Public/Granted literature
- US20220336477A1 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-10-20
Information query
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