Invention Grant
- Patent Title: Semiconductor memory structure and method for forming the same
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Application No.: US17243732Application Date: 2021-04-29
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Publication No.: US11574928B2Publication Date: 2023-02-07
- Inventor: Chenchen Jacob Wang , Sai-Hooi Yeong , Bo-Feng Young , Chun-Chieh Lu , Yu-Ming Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/1159
- IPC: H01L27/1159 ; H01L27/11587 ; H01L29/417 ; H01L29/78 ; H01L21/28 ; H01L29/66
Abstract:
A semiconductor memory structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes spacers formed over opposite sides of the gate structure. The structure also includes source drain epitaxial structures formed on opposite sides of the gate structure beside the spacers. The gate structure includes a III-V ferroelectric layer formed between an interfacial layer and a gate electrode layer.
Public/Granted literature
- US20220352183A1 SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2022-11-03
Information query
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