Invention Grant
- Patent Title: Metal oxide and field-effect transistor
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Application No.: US17371153Application Date: 2021-07-09
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Publication No.: US11574933B2Publication Date: 2023-02-07
- Inventor: Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2016-111984 20160603,JPJP2016-125756 20160624,JP2016-126116 20160625,JP2016-135510 20160707,JP2016-151723 20160802,JP2016-155888 20160808,JP2016-184961 20160922,JP2016-189426 20160928
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/06 ; H01L29/66 ; H01L29/786

Abstract:
To provide a novel material. In a field-effect transistor including a metal oxide, a channel formation region of the transistor includes a material having at least two different energy band widths. The material includes nano-size particles each with a size of greater than or equal to 0.5 nm and less than or equal to 10 nm. The nano-size particles are dispersed or distributed in a mosaic pattern.
Public/Granted literature
- US20210408073A1 METAL OXIDE AND FIELD-EFFECT TRANSISTOR Public/Granted day:2021-12-30
Information query
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