Invention Grant
- Patent Title: Semiconductor device with low dark noise
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Application No.: US16709848Application Date: 2019-12-10
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Publication No.: US11574942B2Publication Date: 2023-02-07
- Inventor: Yun-Chung Na , Yen-Cheng Lu , Ming-Jay Yang , Szu-Lin Cheng
- Applicant: Artilux, Inc.
- Applicant Address: US CA Menlo Park
- Assignee: Artilux, Inc.
- Current Assignee: Artilux, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Fish & Richardson P.C.
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/167
Abstract:
A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a second conductivity type different from the first conductivity type.
Information query
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