Invention Grant
- Patent Title: Semiconductor device including isolation regions
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Application No.: US17212847Application Date: 2021-03-25
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Publication No.: US11575002B2Publication Date: 2023-02-07
- Inventor: Min-Chul Sun , Dae Won Ha , Dong Hoon Hwang , Jong Hwa Baek , Jong Min Jeon , Seung Mo Ha , Kwang Yong Yang , Jae Young Park , Young Su Chung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0123503 20170925
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L21/8234 ; H01L21/762 ; H01L27/11 ; H01L29/417
Abstract:
A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.
Public/Granted literature
- US20210233995A1 SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS Public/Granted day:2021-07-29
Information query
IPC分类:
