Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16562093Application Date: 2019-09-05
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Publication No.: US11575010B2Publication Date: 2023-02-07
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Beijing; CN Shanghai
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Beijing; CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201510860803.9 20151201
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/10 ; H01L29/66 ; H01L29/06 ; H01L29/78
Abstract:
A semiconductor device includes a substrate, a plurality of fins on the substrate, and an isolation region between the fins. Each of the fins includes a semiconductor material region and an impurity region disposed in the semiconductor material region. The impurity region has an upper surface below an upper surface of the isolation region.
Public/Granted literature
- US20190393310A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-12-26
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