Invention Grant
- Patent Title: Semiconductor device and electronic device
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Application No.: US17279735Application Date: 2019-10-22
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Publication No.: US11575013B2Publication Date: 2023-02-07
- Inventor: Kouhei Toyotaka , Hideki Uochi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JPJP2018-207026 20181102
- International Application: PCT/IB2019/058970 WO 20191022
- International Announcement: WO2020/089729 WO 20200507
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/26 ; H01L27/06 ; H01L27/088 ; H02M7/10

Abstract:
A semiconductor device and the like with low power consumption are provided. In a semiconductor device including an electrostatic actuator group, an OS transistor and a capacitor are provided in each electrostatic actuator, and a power supply voltage supplied from the outside is boosted in each electrostatic actuator. The use of the OS transistor can retain the boosted voltage for a long period even after the supply of the power supply voltage is stopped. The use of the OS transistor can miniaturize the capacitor.
Public/Granted literature
- US20220037475A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2022-02-03
Information query
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