Invention Grant
- Patent Title: Source/drain structure for semiconductor device
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Application No.: US17207359Application Date: 2021-03-19
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Publication No.: US11575026B2Publication Date: 2023-02-07
- Inventor: Chien-Wei Lee , Chii-Horng Li , Heng-Wen Ting , Yee-Chia Yeo , Yen-Ru Lee , Chih-Yun Chin , Chih-Hung Nien , Jing-Yi Yan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/45 ; H01L29/08 ; H01L29/78 ; H01L29/167 ; H01L21/02 ; H01L29/40 ; H01L21/225 ; H01L21/8234 ; H01L29/417
Abstract:
The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, an epitaxial region formed in the fin structure and adjacent to the gate structure. The epitaxial region can embed a plurality of clusters of dopants.
Public/Granted literature
- US20220302281A1 SOURCE/DRAIN STRUCTURE FOR SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
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