Invention Grant
- Patent Title: Semiconductor element and semiconductor device
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Application No.: US17201108Application Date: 2021-03-15
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Publication No.: US11575031B2Publication Date: 2023-02-07
- Inventor: Yoko Iwakaji , Tomoko Matsudai , Hiroko Itokazu , Keiko Kawamura , Kaori Fuse , Takako Motai
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2020-152286 20200910
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.
Public/Granted literature
- US20220077306A1 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE Public/Granted day:2022-03-10
Information query
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