A method of forming a semiconductor device includes: depositing a first conductive plate and a second conductive plate adjacent to the first conductive plate; depositing a first insulating plate on the first conductive plate and the second conductive plate; depositing a third conductive plate on the first insulating plate; depositing a second insulating plate on the third conductive plate; forming a fourth conductive plate on the second insulating plate; forming a first conductive via penetrating the fourth conductive plate, the second insulating plate, the first insulating plate, and the first conductive plate; and forming a second conductive via penetrating the second insulating plate, the third conductive plate, the first insulating plate, and the second conductive plate.