Photovoltaic module
Abstract:
Described herein is a photovoltaic module, which includes PV cells capable of converting light incoming from a front side and from a rear side (3) and a transparent rear side including a rear surface carrying a structured layer (9), where the lower surface of the structured layer (9) is the lower surface of the module, and where the surface of layer (9) is structured by parallel V-shaped grooves of depth h2 or less than h2, where the lateral faces of the grooves of depth less than h2 form a groove angle beta and adjacent faces of neighbouring grooves form a peak of apex angle alpha, characterized in that h2 is from the range 5 to 200 micrometer, and each pair of neighbouring grooves includes one groove of depth h2 and one groove of depth (h2−h1), where h1 ranges from 0.1 h2 to 0.9 h2.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/04 .用作光伏〔PV〕转换器件(制造中其测试入H01L21/66;制造之后其测试入H02S50/10)
H01L31/06 ..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/068 ...只是PN单质结型势垒的,例如体硅PN单质结太阳能电池或薄膜多晶硅PN单质结太阳能电池
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